01070134| Datasheet
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General Technical Information General technical information
1 Basic construction
Dielectric
Cathode
Anode + -
A C = 0 r --d C Capacitance 0 Absolute permittivity r Relative dielectric constant A Capacitor electrode surface area d Electrode spacing F As/Vm (27 for Ta2O5, 41 for Nb2O5) m2 m
Graphite
Metal Ta 2 O 5 or (Ta or Nb) Nb 2 O 5
Ag
Semiconductor (MnO 2 or polymer)
Fig. 1 Anode Dielectric Cathode
Basic construction of tantalum and niobium capacitors and calculation of capacitance Body of sintered metal powder (Ta or Nb) Metal oxide, generated electrochemically by oxidation on the anode Semi-conducting layer (manganese dioxide) or highly conductive polymer deposited on the oxide layer Graphite and conducting silver layer that is applied on the conductive coating and soldered or glued to the case or the terminals
Contacts to the cathode
107 10/02
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