1N4154

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1N4154
General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. Features:

DISCRETE POWER AND SIGNAL TECHNOLOGIES

500 milliwatt Power Dissipation package. Fast Switching Speed, Typical capacitance less than 1.0 picofarad. Ordering: 13 inch reel, 50 mm (T50R) 26 mm (T26R) Tape; 10,000 units per reel.

High Conductance Fast Diode
Absolute Maximum Ratings Sym
Tstg TJ PD R OJA Wiv IO IF if iF(surge)

TA 25OC unless otherwise noted

Parameter
Storage Temperature Operating Junction Temperature Total Power Dissipation at TA 25OC Linear Derating Factor from TA 25OC Thermal Resistance Junction-to-Ambient Working Inverse Voltage Average Rectified Current DC Forward Current (IF) Recurrent Peak Forward Current (IF) Peak Forward Surge Current (IFSM) Pulse Width 1.0 second Pulse Width 1.0 microsecond

Value
-65 to 200 175 500 3.33 300 35 100 300 400 1.0 4.0
CATHODE BAND MARKING LOGO 1N 41 54

Units
OC OC mW mW/OC OC/W V mA mA mA Amp Amp

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired 0.500 Minimum 12.70 Typ 1.000 0.200 (5.08) 0.120 (3.05)

0.022 (0.558) Diameter 0.018 (0.458) Typ 20 mils 0.090 (2.28) Diameter 0.060 (1.53)

Electrical Characteristics SYM BV IR VF CT TRR

TA 25OC unless otherwise noted

CHARACTERISTICS Breakdown Voltage Reverse Leakage Forward Voltage Capacitance Reverse Recovery Time

MIN 35

MAX

UNITS V IR

TEST CONDITIONS 5.0 uA 25 V 25 V, TA 150OC 30 mA 0.0 V, f 1.0 MHz

100 100 1.0 4.0 4.0

nA uA V pF ns

VR VR IF VR

IF 10 mA VR 6.0 V IRR 1.0 mA, RL 100 ohms
Revision A - September 21, 1998

1997 Fairchild Semiconductor Corporation

1N4154 Datasheet Fairchild Download PDF

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1N4154 DATASHEET