1N4454

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1N4454

Discrete POWER Signal Technologies

1N4454

DO-35

High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.

Absolute Maximum Ratings
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current

TA 25 C unless otherwise noted

Parameter

Value
50 200 400 600 1.0 4.0 -65 to 200 175

Units
V mA mA mA A A C C

Tstg TJ

Peak Forward Surge Current Pulse width 1.0 second Pulse width 1.0 microsecond Storage Temperature Range Operating Junction Temperature

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
1N4454 500 3.33 300

Units
mW mW/ C C/W

1997 Fairchild Semiconductor Corporation

1N4454 Datasheet Fairchild Download PDF

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1N4454 DATASHEET