2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
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2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
Discrete POWER Signal Technologies
2N3390 2N3391 2N3391A 2N3392 2N3393
B
C
TO-92
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA 25 C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
25 25 5.0 500 -55 to 150
Units
V V V mA C
Operating and Storage Junction Temperature Range
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA 25 C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200
Units
mW mW/ C C/W C/W
1997 Fairchild Semiconductor Corporation
3390-93, Rev B
2N3393 Datasheet Fairchild Download PDF
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