2N3416 / 2N3417

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2N3416 / 2N3417

2N3416 2N3417

B

C

TO-92
E

NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter
Collector-Emitter Voltage

Value
50 50 5.0 500 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
2N3416 / 2N3417 625 5.0 83.3 200

Units
mW mW/ C C/W C/W

1997 Fairchild Semiconductor Corporation

3416-3417, Rev B

2N3417 Datasheet Fairchild Download PDF

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2N3417 DATASHEET