2N3703

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2N3703

2N3703
PNP General Purpose Amplifier
This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66.

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TST Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -30 -50 -5.0 -500 -55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob fT Parameter Test Condition IC -10mA, IB 0 IC -100 A, IE 0 IE -100 A, IC 0 VCB -20V, IE 0 VEB -3.0V, IC 0 VCE -5.0V, IC -50mA IC -50mA, IB -5.0mA VCE -5.0V, IC -50mA VCB -10V, f 1.0MHz IE -50mA, VCE -5.0V f 20MHz 100 -0.6 30 Min. -30 -50 -5.0 -100 -100 150 -0.25 -1.0 12 V V pF MHz Typ. Max. Units V V V nA nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

On Characteristics

Small Signal Characteristics

Pulse Test: Pulse 300 s, Duty Cycle 2.0%

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/ C C/W C/W

2002 Fairchild Semiconductor Corporation

Rev. B, July 2002