2N3704

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

2N3704

2N3704
NPN General Purpose Amplifier
This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TST Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 50 5.0 500 -55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) Cob fT Parameter Test Condition IC 10mA, IB 0 IC 100 A, IE 0 IE 100 A, IC 0 VCB 20V, IE 0 VEB 3.0V, IC 0 VCE 5.0V, IC 50mA IC 100mA, IB 5.0mA VCE 2.0V, IC 100mA VCB 10V, f 1.0MHz IC 50mA, VCE 2.0V 100 100 0.5 Min. 30 50 5.0 100 100 300 1.0 0.6 12 V V pF MHz Typ. Max. Units V V V nA nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

On Characteristics

Small Signal Characteristics

Pulse Test: Pulse 300 s, Duty Cycle 2.0%

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/ C C/W C/W

2002 Fairchild Semiconductor Corporation

Rev. B, July 2002