2N3819

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2N3819

2N3819
N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92

1. Drain 2. Gate 3. Source

Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VDG VGS ID IGF TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Storage Temperature Range Ratings 25 -25 50 10 -55 150 Units V V mA mA C

This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)GSS IGSS VGS(off) VGS IDSS gfs goss yfs Ciss Crss Parameter Test Condition IG 1.0 A, VDS 0 VGS -15V, VDS 0 VDS 15V, ID 2.0nA VDS 15V, ID 200 A VDS 15V, VGS 0 VDS 15V, VGS 0, f 1.0KHz VDS 15V, VGS 0, f 1.0KHz VDS 15V, VGS 0, f 1.0KHz VDS 15V, VGS 0, f 1.0KHz VDS 15V, VGS 0, f 1.0KHz 1600 8.0 4.0 -0.5 2.0 2000 Min. 25 2.0 8.0 -7.5 20 6500 50 Typ. Max. Units V nA V V mA mhos mhos mhos pF pF Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage Zero-Gate Voltage Drain Current Forward Transfer Conductance Output Conductance Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance

On Characteristics Small Signal Characteristics

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.5" 1.6" 0.06"

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002