2N3820

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2N3820

2N3820
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89.

TO-92

1. Drain 2. Gate 3. Source

Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VDG VGS IGF TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Storage Temperature Range Ratings -20 20 10 -55 150 Units V V mA C

This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)GSS IGSS VGS(off) IDSS gfs Ciss Crss Parameter Test Condition IG 10 A, VDS 0 VGS 10V, VDS 0 VDS -10V, ID -10 A VDS -10V, VGS 0 VDS -10V, VGS 0, f 1.0KHz VDS -10V, VGS 0, f 1.0KHz VDS -10V, VGS 0, f 1.0KHz -0.3 800 Min. 20 20 8.0 -15 5000 32 16 Typ. Max. Units V nA V mA mhos pF pF Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Conductance Input Capacitance Reverse Transfer Capacitance

On Characteristics Small Signal Characteristics

Pulse Test: Pulse Width 300ms, Duty Cycle 2%

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" 1.6" 0.06"

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002