2N3906

2N3906 / MMBT3906 / PZT3906

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2N3906 / MMBT3906 / PZT3906

2N3906

MMBT3906
C

PZT3906
C

E C B

E C

TO-92
E

SOT-23
Mark: 2A

SOT-223

PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
40 40 5.0 200 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3906 625 5.0 83.3 200

Max
MMBT3906 350 2.8 357 PZT3906 1,000 8.0 125

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

2001 Fairchild Semiconductor Corporation

2N3906/MMBT3906/PZT3906, Rev A