2N4953

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2N4953

2N4953
NPN General Purpose Amplifier
This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10.

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TST Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 60 5.0 1.0 -55 150 Units V V V A C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

2002 Fairchild Semiconductor Corporation

Rev. B, July 2002