2N5086/2N5087/MMBT5087

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2N5086/2N5087/MMBT5087

2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.
1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 2Q 1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value -50 -50 -3.0 -100 -55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Parameter Test Condition IC -1.0mA, IB 0 IC -100 A, IE 0 VCB -10V, IE 0 VCB -35V, IE 0 VEB -3.0V, IC 0 IC -100 A, VCE -5.0V IC -1.0mA, VCE -5.0V IC -10mA, VCE -5.0V VCE(sat) VBE(on) fT Ccb hfe NF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure IC -10mA, IB -1.0mA IC -1.0mA, VCE -5.0V IC -500 A, VCE -5.0V, f 20MHz VCB -5.0V, IE 0, f 100KHz IC -1.0mA, VCE -5.0V, f 1.0KHz IC -100 A, VCE -5.0V RS 3.0k, f 1.0KHz IC -20 A, VCE -5.0V RS 10k f 10Hz to 15.7KHz
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Min. -50 -50

Max.

Units V V

Off Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CBO ICEO ICBO hFE Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain

-10 -50 -50 5086 5087 5086 5087 5086 5087 150 250 150 250 150 250 500 800

nA nA nA

On Characteristics

-0.3 -0.85 40 4.0 5086 5087 5086 5087 5086 5087 150 250 600 900 3.0 2.0 3.0 2.0

V V MHz pF

Small Signal Characteristics

dB dB dB dB

2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086 Datasheet Fairchild Download PDF

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2N5086 DATASHEET