2N5088 / MMBT5088 / 2N5089 / MMBT5089

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2N5088 / MMBT5088 / 2N5089 / MMBT5089

2N5088 2N5089

MMBT5088 MMBT5089
C

E C B

TO-92
E

SOT-23
Mark: 1Q / 1R

B

NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter
2N5088 2N5089 2N5088 2N5089

Value
30 25 35 30 4.5 100 -55 to 150

Units
V V V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol

TA 25 C unless otherwise noted

Characteristic
2N5088 2N5089 625 5.0 83.3 200

Max
MMBT5088 MMBT5089 350 2.8 357

Units

PD RJC RJA

Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation

2N5088/2N5089/MMBT5088/MMBT5089, Rev A

2N5089 Datasheet Fairchild Download PDF

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2N5089 DATASHEET