2N5246

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2N5246

2N5246
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92
1

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Ratings 30 -30 10 -55 150 Units V V mA C

This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)GSS IGSS VGS(off) IDSS gfs goss Parameter Test Condition IG 1.0 A, VDS 0 VGS 25V, VDS 0 VDS 15V, ID 1.0nA VDS 15V, VGS 0 VGS 0V, VDS 15V, f 1.0kHz VGS 0V, VDS 15V, f 1.0kHz -0.5 1.5 3000 Min. -30 -1.0 -4.0 7.0 9500 50 Max. Units V nA V mA mhos mhos Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transferconductance Common- Source Output Conductance

On Characteristics Small Signal Characteristics

Pulse Test: Pulse 300 s

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/ C C/W C/W

2003 Fairchild Semiconductor Corporation

Rev. A, October 2003