2N5366

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2N5366

2N5366
PNP General Purpose Amplifier
This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68.

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Operating and Storage Junction Temperature Range Value 40 40 4.0 500 -55 150 Units V V V mA C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO ICBO ICES IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 10 A IC 10 A VCB 40V VCB 40V VEB 4.0V VCE 10V, IC 2.0mA VCE 1.0V, IC 50mA VCE 5.0V, IC 300mA IC 50mA, IB 2.5mA IC 300mA, IB 30mA IC 50mA, IB 2.5mA IC 300mA, IB 30mA VCE 10V, IC 2.0mA VCB 10V, f 1MHz VCB 0.5V, f 1MHz VCE 10V, IC 2.0mA, f 1MHz 80 450 0.5 80 100 40 IC 10mA Min. 40 40 4.0 100 100 10 300 0.25 1.0 1.1 2.0 0.8 8.0 35 V pF pF V Typ. Max. Units V V V nA nA

VCE(sat) VBE(sat) VBE(on) Cob Cib hfe

Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Input Capacitance Small-Signal Current Gain

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 625 5.0 200 Units mW mW/ C

C/W

2002 Fairchild Semiconductor Corporation

Rev. A1, July 2002