2N5401

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2N5401

2N5401
Amplifier Transistor
Collector-Emitter Voltage: VCEO 150V Collector Dissipation: PC (max) 625mW Suffix "-C" means Conter Collector (1. Emitter 2. Collector 3. Base)

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Value -160 -150 -5 -600 625 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC -100 A, IE 0 IC -1mA, IB 0 IE -10 A, IC 0 VCB -120V, IE 0 VEB -3V, IC 0 IC -1mA, VCE -5V IC -10mA, VCE -5V IC -50mA, VCE -5V IC -10mA, IB -1mA IC -50mA, IB -5mA IC -10mA, IB -1mA IC -50mA, IB -5mA IC -10mA, VCE -10V, f 100MHz VCB -10V, IE 0, f 1MHz IC -250 A, VCE -5V RS 1K f 10Hz to 15.7KHz 100 30 60 50 Min. -160 -150 -5 -50 -50 240 -0.2 -0.5 -1 -1 400 6 8 V V V V MHz pF dB Typ. Max. Units V V V nA nA

VCE (sat) VBE (sat) fT Cob NF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure

Pulse Test: Pulse Width300 s, Duty Cycle2%

2004 Fairchild Semiconductor Corporation

Rev. B, May 2004