2N5460

2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462

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2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462

2N5460 2N5461 2N5462

MMBF5460 MMBF5461 MMBF5462
G

S G S

TO-92
D

SOT-23
Mark: 6E / 61U / 61V

NOTE: Source Drain are interchangeable

P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

Absolute Maximum Ratings
-

TA 25 C unless otherwise noted

Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

Parameter

Value
- 40 40 10 -55 to 150

Units
V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5460-5462 350 2.8 125 357

Max
MMBF5460-5462 225 1.8 556

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation

2N5460/5461/5462/MMBF5460/5461/5462, Rev A