2N5485

2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486

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2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486

2N5484 2N5485 2N5486

MMBF5484 MMBF5485 MMBF5486
G

S G S

TO-92
D

SOT-23
Mark: 6B / 6M / 6H

NOTE: Source Drain are interchangeable

N-Channel RF Amplifier
This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

Absolute Maximum Ratings
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

TA 25 C unless otherwise noted

Parameter

Value
25 - 25 10 -55 to 150

Units
V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5484-5486 350 2.8 125 357

Max
MMBF5484-5486 225 1.8 556

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation