2N5551

2N5551- MMBT5551 NPN General Purpose Amplifier

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

2N5551- MMBT5551 NPN General Purpose Amplifier

April 2006

2N5551- MMBT5551
NPN General Purpose Amplifier
Features
This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix "-C" means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix "-Y" means hFE 180 240 in 2N5551 (Test condition : IC 10mA, VCE 5.0V)

2N5551
3

MMBT5551

TO-92
1 SOT-23 Marking: 3S

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings T
Symbol
VCEO VCBO VEBO IC TJ, Tstg
NOTES:

25 C unless otherwise noted

Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature

Value
160 180 6.0 600 -55 150

Units
V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T 25 C unless otherwise noted
a

Symbol
PD RJA RJA

Parameter
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max 2N5551
625 5.0 83.3 200 357

MMBT5551
350 2.8

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" 1.6" 0.06."

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

2N5551- MMBT5551 Rev. B