2N5639

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2N5639

2N5639
N-Channel Switch
This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51.

TO-92

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 30 -30 50 -55 150 Units V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)GSS IGSS ID(off) IDSS rDS(on) rds(on) Ciss Crss td(on) tr td(off) tf Parameter Test Condition VDS 0, IG -10 A VGS -15V, VDS 0 VDS 12V, VGS 15V VDS 20V, IGS 0 VGS 0V, ID 1.0mA VDS VGS 0, f 1.0kHz VDS 0, VGS 12V, f 1.0MHz VDS 0V, VGS 12V, f 1.0MHz VDD 10V, VGS(on) 0 VGS(off) -12, ID(on) 12mA RG 50 25 60 60 10 4.0 6.0 8.0 10 20 Min. -30 -1.0 1.0 Typ. Max. Units V nA nA mA pF pF ns ns ns ns Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Leakage Current Zero-Gate Voltage Drain Current Drain-Source On Resistance Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance Trun On Delay Time Rise Time Trun Off Delay Time Fall Time

On Characteristics

Small Signal Characteristics

Switching Characteristics

Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/ C C/W C/W

2003 Fairchild Semiconductor Corporation

Rev. A, July 2003