2N5962

2N5962/ MMBT5962

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2N5962/ MMBT5962

Discrete POWER Signal Technologies

2N5962

MMBT5962
C

E C BE

TO-92 SOT-23
Mark: 117

NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
45 45 8.0 100 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5962 625 5.0 83.3 200

Max
MMBT5962 350 2.8 357

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation