2N6076

DISCRETE POWER & SIGNAL TECHNOLOGIES

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

DISCRETE POWER SIGNAL TECHNOLOGIES

2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO . . . . 25 V (Min) hFE . . . . 100 (Min) VCE 10 V, IC 10 mA
1 B 2 C 3 E 0.175 - 0.185 (4.450 - 4.700) LOGOXYY

0.135 - 0.145 (3.429 - 3.683)

ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature POWER DISSIPATION (NOTES 2 3) Total Device Dissipation at TA 25 Deg C VOLTAGES CURRENT VCEO Collector to Emitter VCBO Collector to Base VEBO Emitter to Base IC Collector Current

150 Degrees C 150 Degrees C

2N 6076

0.175 - 0.185 (4.450 - 4.700)

SEATING

625 mW
0.500 (12.70)

PLANE

MIN

25 V 25 V 5V 500 mA

0.016 - 0.021 (0.410- 0.533) 0.045 - 0.055 (1.143- 1.397) 0.095 - 0.105 (2.413 - 2.667)

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)

SYM
BVCBO BVCEO BVEBO ICBO ICES IEBO hFE VCE(sat) VBE(sat) VBE(on)

CHARACTERISTICS
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base -Emitter On Voltage

MIN MAX
25 25 5 100 10 100 100 100 500 0.25 0.8 0.5 1.2

UNITS
V V V nA uA nA uA V V V

TEST CONDITIONS
IC IC IE 100 uA 10 mA 10 uA

VCB 25 V VCB 25 V , T 100 C VCE 25 V VEB 3.0 V VCE 10 V IC 10 mA IC 10mA IB 1.0mA IC 10mA IB 1.0mA VCE 10 V IC 10mA

1998 Fairchild Semiconductor Corporation

2n6076.ppt6894 revA