2N6428A

2N6428A NPN Epitaxial Silicon Transistor

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2N6428A NPN Epitaxial Silicon Transistor

December 2006

2N6428A
NPN Epitaxial Silicon Transistor
Features
This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA.

TO92
1 2 3

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PD TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Junction Temperature Storage Temperature Range

Ta 25 C unless otherwise noted

Parameter

Value
60 50 5 200 625 150 - 55 150

Unit
V V V mA mW C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE

TC 25 C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Conditions
IC 100 A, IE 0 IC 1mA, IB 0 IE 100 A, IC 0 VCB 30V, IE 0 VBE 5V, IC 0 VCE 5V, IC 0.01mA VCE 5V, IC 0.1mA VCE 5V, IC 1.0mA VCE 5V, IC 10mA IC 10mA, IB 0.5mA IC 100mA, IB 5.0mA VCE 5V, IC 1.0mA IC 1mA, VCE 5.0V, f 100MHz VCB 10V, IE 0, f 1MHz

Min.
60 50 5

Max.

Units
V V V

10 10 250 250 250 250 0.2 0.6 0.56 100 0.66 700 3 650 650

nA nA

VCE (sat) VBE (on) fT Cob

Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

V V V MHz pF

DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

2N6428A Rev. A