2N6517

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2N6517

2N6517
High Voltage Transistor
Collector-Emitter Voltage: VCEO 350V Collector Dissipation: PC (max) 625mW Complement to 2N6520 Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92

1

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 350 350 6 500 625 150 -55 150 Units V V V mA mW C C

Refer to 2N6515 for graphs

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 1mA, IB 0 IC 100 A, IE 0 IE 10 A, IC 0 VCB 250V, IE 0 VEB 5V, IC 0 IC 1mA, VCE 10V IC 10mA, VCE 10V IC 30mA, VCE 10V IC 50mA, VCE 10V IC 100mA, VCE 10V IC 10mA, IB 1mA IC 20mA, IB 2mA IC 30mA, IB 3mA IC 50mA, IB 5mA IC 10mA, IB 1mA IC 20mA, IB 2mA IC 30mA, IB 3mA VCB 20V, IE 0, f 1MHz IC 10mA, VCE 20V, f 20MHz IC 100mA, VCE 10V 40 20 30 30 20 15 Min. 350 350 6 50 50 Typ. Max. Units V V V nA nA

200 200 0.3 0.35 0.5 1 0.75 0.85 0.9 6 200 2 V V V V V V V pF MHz V

VCE (sat)

Collector-Emitter Saturation Voltage

VBE (sat)

Base-Emitter Saturation Voltage

Cob fT VBE(on)

Output Capacitance Current Gain Bandwidth Product Base Emitter On Voltage

Pulse Test: Pulse Width300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

2N6517 Datasheet Fairchild Download PDF

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2N6517 DATASHEET