November 1995

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November 1995

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

D

G

D G S
TO-92
2N7000

S
(TO-236AB) 2N7002/NDS7002A

Absolute Maximum Ratings
Symbol Parameter

TA 25 C unless otherwise noted
2N7000 2N7002 NDS7002A

Units

VDSS

Drain-Source Voltage

60 60

V V V

VDGR
VGSS

Drain-Gate Voltage (RGS 1 M)
Gate-Source Voltage - Continuous - Non Repetitive (tp 50 s)

20 40
200 500 400 3.2 -55 to 150 300 115 800 200 1.6 280 1500 300 2.4 -65 to 150

ID PD TJ,TSTG TL

Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation Derated above 25 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
o

mA mW mW/ C C C

THERMAL CHARACTERISTICS

RJA

Thermal Resistance, Junction-to-Ambient

312.5

625

417

C/W

1997 Fairchild Semiconductor Corporation

2N7000.SAM Rev. A1

2N7000 Datasheet Fairchild Download PDF

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2N7000 DATASHEET