2N7000BU

Advanced Small Signal MOSFET

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

Advanced Small Signal MOSFET
FEATURES
n Fast Switching Times n Improved Inductive Ruggedness n Lower Input Capacitance n Extended Safe Operating Area n Improved High Temperature Reliability

2N7000BU/2N7000TA
BVDSS 60 V RDS(on) 5.0 ID 200 mA
TO-92

1.Source 2. Gate 3. Drain

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25) Continuous Drain Current (TC 100) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC 25) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds

Value 60 200 110 1000 30 400 3.2 - 55 to 150

Units V mA mA V mW mW/

300

Thermal Resistance
Symbol RJA Characteristic Junction-to-Ambient Typ. -Max. 312.5 Units /W

Rev. B