N-Channel Small Signal MOSFET
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N-Channel Small Signal MOSFET
FEATURES
Lower RDS(on) Improved Inductive Ruggedness Fast Switching Times Lower Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability
2N7002MTF
BVDSS 60 V RDS(on) 5.0 ID 200 mA
SOT-23
Product Summary
Part Number 2N7002 BVDSS 60V RDS(on) 5.0 ID 115mA
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25) Continuous Drain Current (TC 100) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC 25) Linear Derating Factor Operating Junction and Storage Temperature Range
Value 60 115 73 800 20 0.2 1.6 - 55 to 150
Units V mA mA V W mW/
Thermal Resistance
Symbol RJA Characteristic Junction-to-Ambient Typ. -Max. 625 Units /W
Rev. C1
2N7002MTF Datasheet Fairchild Download PDF
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