2N7051

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

2N7051

2N7051
NPN Darlington Transistor
This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics. TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TA 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 100 100 12 1.5 -55 150 Units V V V A C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TA 25 C unless otherwise noted
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO ICES IEBO hFE VCE (sat) VBE (sat) fT hfe Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Small Signal Current Gain On Characteristics VCE 5.0V, IC 100mA VCE 5.0V, IC 1.0A IC 100mA, IB 0.1mA IC 100mA, VBE 5.0V IC 100mA, VCE 5.0V VCE 5.0V, IC 100mA, f 20MHz 200 10 100 10,000 1,000 20,000 1.5 2.0 V V MHz Parameter Test Condition IC 1.0mA, IB 0 IC 100 A, IB 0 IE 1.0mA, IC 0 VCB 80V, IE 0 VCE 80V, IE 0 VEB 7.0V, IC 0 Min. 100 100 12 0.1 0.2 0.1 Typ. Max. Units V V V A A A Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current

Small Signal Characteristics

Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%

2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002