2N7052

2N7052 / 2N7053 / NZT7053

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2N7052 / 2N7053 / NZT7053

Discrete POWER Signal Technologies

2N7052

2N7053

NZT7053
C

E C B

TO-92
E C B E

TO-226

SOT-223

NPN Darlington Transistor
This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
100 100 12 1.5 -55 to 150

Units
V V V A C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N7052 625 5.0 83.3 200

Max
2N7053 1,000 8.0 125 50 NZT7053 1,000 8.0 125

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

1997 Fairchild Semiconductor Corporation