BAS21

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BAS21

BAS21
CONNECTION DIAGRAM

3

3

3

A82.
2
1 2
1 2 NC

SOT-23

1

General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.

Absolute Maximum Ratings
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current

TA 25 C unless otherwise noted

Parameter

Value
250 200 600 700 1.0 2.0 -55 to 150 150

Units
V mA mA mA A A C C

Tstg TJ

Peak Forward Surge Current Pulse width 1.0 second Pulse width 1.0 microsecond Storage Temperature Range Operating Junction Temperature

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
BAS21 350 2.8 357

Units
mW mW/ C C/W

2002 Fairchild Semiconductor Corporation

BAS21. Rev. A1

BAS21 Datasheet Fairchild Download PDF

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BAS21 DATASHEET