BAS31

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BAS31

BAS31
3

Connection Diagram
3 3

2 1

L21
1 2 1 2

SOT-23

Small Signal Diode
Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM
TA 25 C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width 1.0 second Pulse Width 1.0 microsecond Storage Temperature Range Operating Junction Temperature

Value
120 200 1.0 2.0 -55 to 150 150

Units
V mA A A C C

Tstg TJ

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient
TA 25 C unless otherwise noted

Parameter

Value
350 357

Units
mW C/W

Electrical Characteristics
Symbol
VR VF

Parameter
Breakdown Voltage Forward Voltage

Test Conditions
IR 1.0 mA IF 10 mA IF 50 mA IF 100 mA IF 200 mA IF 400 mA VR 90 V VR 90 V, TA 150 C VR 0, f 1.0 MHz IF IR 30 mA, IRR 3.0 mA, RL 100

Min
120

Max
750 840 900 1.0 1.25 100 100 35 50

Units
V mV mV mV V V nA A pF ns

IR CT trr

Reverse Current Total Capacitance Reverse Recovery Time

2001 Fairchild Semiconductor Corporation

BAS31, Rev. C

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BAS31 DATASHEET