BAT54SWT1G/BAT54CWT1G Schottky Diodes

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BAT54SWT1G/BAT54CWT1G Schottky Diodes

April 2005

BAT54SWT1G/BAT54CWT1G
Schottky Diodes

Connection Diagram
3
BAT54SWT1G BAT54CWT1G

3

3

1

2
MARKING

1

2

1

2

SOT-323

BAT54SWT1G YB BAT54CWT1G YC

Absolute Maximum Ratings
Symbol
VRRM IF(AV) IFSM TSTG TJ

Ta 25 C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width 1.0 second Storage Temperature Range Operating Junction Temperature

Value
30 200 600 -65 to 125 -65 to 125

Unit
V mA mA C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient

Parameter

Value
232 430

Unit
mW C/W

FR-4 board (3.0 4.5 0.062" by 1.0 0.5" land pads)

Electrical Characteristics
Symbol
VR VF

TC 25 C unless otherwise noted

Parameter
Breakdown Voltage Forward Voltage IR 10 A IF 0.1mA IF 1mA IF 10mA IF 30mA IF 100mA VR 25V

Conditions

Min.
30

Max.
240 320 400 500 0.8 2 10 5.0

Units
V mV mV mV mV V A pF ns

IR CT trr

Reverse Leakage Total Capacitance Reverse Recovery Time

VR 1V, f 1.0MHz IF IR 10mA, IRR 1.0mA, RL 100

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

BAT54SWT1G/BAT54CWT1G Rev. A

BAT54SWT1G Datasheet Fairchild Download PDF

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BAT54SWT1G DATASHEET