BC182LB

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BC182LB

BC182LB
NPN General Purpose Amplifier
This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Storage Junction Temperature Range Value 50 60 6 100 - 55 150 Units V V V mA C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Parameter Test Condition IC 2mA, IB 0 IC 10 A, IE 0 IE 100 A, IC 0 VCB 50V, VBE 0 VEB 4V, IE 0 VCE 5V, IC 10 A VCE 5V, IC 100mA IC 10mA, IB 0.5mA IC 100mA, IB 5mA IC 100mA, IB 5mA VCE 5V, IC 2mA VCE 5V, IC 10mA, f 100MHz VCE 10V, IC 0, f 1MHz VCE 5V, IC 2mA, f 1KHz VCE 5V, IC 0.2mA RS 2K, f 1KHz, BW 200Hz 240 0.55 150 5 500 10 dB 40 80 0.25 0.6 1.2 0.7 V V V MHz pF Min. 50 60 6 15 15 Typ. Max. Units V V V nA nA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current

On Characteristics hFE DC Current Gain VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage

Dynamic Characteristics fT Current Gain Bandwidth Product Cob hfe NF Output Capacitance Small Signal Current Gain Noise Figure

2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002