BC184C

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BC184C

BC184C
Silicon NPN Small Signal Transistor (Note 1)
BVCEO 30V (Min.) hFE 130 (Min.) VCE 5.0V, IC 100mA

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (Ta 25 C) (Note 2, 3) Junction Temperature Storage Temperature Value 45 30 5 500 350 150 - 55 150 Units V V V mA mW C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 10 A IC 2mA IE 10 A VCB 30V VEB 4V VCE 5V, IC 10 A VCE 5V, IC 2mA VCE 5V, IC 100mA IC 10mA, IB 0.5mA IC 100mA, IB 5mA IC 100mA, IB 5mA VCE 5V, IC 2mA VCE 10V, f 1MHz VCE 5V, IC 10mA f 100MHz VCE 5V, IC 2mA f 1KHz VCE 5V, IC 200mA RG 2K, f 30Hz 15KHz VCE 5V, IC 200 A, f 1KHz 150 240 900 4 4 dB 0.55 100 250 130 Min. 45 30 5 15 15 800 0.6 0.25 1.2 0.7 5 V V V pF MHz Typ. Max. Units V V V nA nA

VCE(sat) VBE(sat) VBE(on) COB fT hFE NF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current gain Bandwidth Product Small Signal Current Gain Noise Figure

Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C.

2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002