BC212L

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BC212L

BC212L

B C E

TO-92

PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68.

Absolute Maximum Ratings
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Value 50 60 5 300 -55 to 150

Units V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol PD RJC RJA Total Device Dissipation Derate above 25 C

TA 25 C unless otherwise noted

Characteristic

Max 625 5.0 83.3 200

Units mW mW/ C C/W C/W
Rev. A 7/24/00

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

2000 Fairchild Semiconductor International

BC212L Datasheet Fairchild Download PDF

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BC212L DATASHEET