BC214L

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BC214L

BC214L
PNP General Purpose Amplifier
This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC)- Continuous Operating and Storage Junction Temperature Range Value -30 -45 -5.0 -500 - 55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC -2mA, IB 0 IC -10 A, IE 0 IE -10 A, IC 0 VCB -30V, IE 0 VEB -4V, IC 0 VCE -5V, IC -10 A VCE -5V, IC -2mA VCE -5V, IC -100mA IC -10mA, IB -0.5mA IC -100mA, IB -5mA IC -100mA, IB -5mA VCE -5V, IC -2mA VCE -5V, IC -10mA f 100MHz VCE -5V, IC -200 A RG 2k, f 15.7KHz IC -2mA, VCE -5V f 1KHz VCB -10V, f 1MHz 140 10 pF -0.6 200 2.0 100 140 120 Min. -30 -45 -5.0 -15 -15 Max. Units V V V nA nA Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

On Characteristics 400 -0.25 -0.6 -1.1 -0.72 V V V MHz dB

VCE(sat) VBE(sat) VBE(on) fT NF hfe COB

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current gain Bandwidth Product Noise Figure Small Signal Current Gain Output Capacitance

Small Signal Characteristics

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2003 Fairchild Semiconductor Corporation

Rev. A, October 2003