BC237

BC237/238/239

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BC237/238/239

BC237/238/239
Switching and Amplifier Applications
Low Noise: BC239

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCES VCEO VEBO IC PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC237 : BC238/239 : BC237 : BC238/239 : BC237 : BC238/239

TO-92

1. Collector 2. Base 3. Emitter

Value 50 30 45 25 6 5 100 500 150 -55 150

Units V V V V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-off Current : BC237 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 Test Condition IC 2mA, IB 0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 150 0.62 85 250 3.5 8 2 10 4 4 6 15 15 800 0.2 0.6 0.83 1.05 0.7 V V V V V MHz MHz pF pF dB dB dB Typ. Max. Units V V V V nA nA

BVEBO

IE 1 A, IC 0

ICES

VCE 50V, VBE 0 VCE 30V, VBE 0 VCE 5V, IC 2mA IC 10mA, IB 0.5mA IC 100mA, IB 5mA IC 10mA, IB 0.5mA IC 100mA, IB 5mA VCE 5V, IC 2mA VCE 3V, IC 0.5mA, f 100MHz VCE 5V, IC 10mA, f 100MHz VCB 10V, IE 0, f 1MHz VEB 0.5V, IC 0, f 1MHz VCE 5V, IC 0.2mA, f 1KHz RG 2K VCE 5V, IC 0.2mA RG 2K, f 30 15KHz

hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF

hFE Classification
Classification hFE
2002 Fairchild Semiconductor Corporation

A 120 220

B 180 460

C 380 800
Rev. A2, August 2002