BC307/308/309

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BC307/308/309

BC307/308/309
Switching and Amplifier Applications
Low Noise: BC309

1

TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -30 -45 -25 -5 -100 500 150 -55 150 Units V V V V V mA mW C C

VCEO

VEBO IC PC TJ TSTG

2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

BC308 Datasheet Fairchild Download PDF

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BC308 DATASHEET