BC327A

BC327A PNP Epitaxial Silicon Transistor

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BC327A PNP Epitaxial Silicon Transistor

BC327A
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings T
Symbol
VCES VCEO VEBO IC PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature

25 C unless otherwise noted

Parameter

Value
-60 -60 -5 -800 625 150 -55 150

Units
V V V mA mW C C

Electrical Characteristics
Symbol
BVCEO BVCES BVEBO ICES hFE1 hFE2 VCE (sat) VBE (on) fT Cob

Ta 25 C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Test Condition
IC -10mA, IB 0 IC -100 A, VBE 0 IE -100 A, IC 0 VCE -45V, VBE 0 VCE -1V, IC -100mA VCE -1V, IC -500mA IC -500mA, IB -50mA VCE -1V, IC -300mA VCE -5V, IC -10mA, f 20MHz VCB -10V, IE 0, f 1MHz

Min.
-60 -60 -5

Typ.

Max.

Units
V V V

-100 100 40 400 -0.7 -1.2 100 12

V V MHz pF

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BC327A Rev. A