BC328

BC327/328

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BC327/328

BC327/328
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338 TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Collector-Emitter Voltage : BC327 : BC328 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -30 -45 -25 -5 -800 625 150 -55 150 Units V V V V V mA mW C C

VCEO

VEBO IC PC TJ TSTG

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Collector-Emitter Breakdown Voltage : BC327 : BC328 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC327 : BC328 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC -10mA, IB 0 Min. -45 -25 IC -0.1mA, VBE 0 -50 -30 IE -10 A, IC 0 VCE -45V, VBE 0 VCE -25V, VBE 0 VCE -1V, IC -100mA VCE -1V, IC -300mA IC -500mA, IB -50mA VCE -1V, IC -300mA VCE -5V, IC -10mA, f 20MHz VCB -10V, IE 0, f 1MHz 100 12 100 40 -5 -2 -2 -100 -100 630 -0.7 -1.2 V V MHz pF V V V nA nA Typ. Max. Units V V

BVCES

BVEBO ICES

hFE1 hFE2 VCE (sat) VBE (on) fT Cob

hFE Classification
Classification hFE1 hFE2 16 100 250 6025 160 400 10040 250 630 170-

2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002