BC338

BC337/338

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BC337/338

BC337/338
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328 TO-92

1. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Collector-Emitter Voltage : BC337 : BC338 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value 50 30 45 25 5 800 625 150 -55 150 Units V V V V V mA mW C C

VCEO

VEBO IC PC TJ TSTG

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Collector-Emitter Breakdown Voltage : BC337 : BC338 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC337 : BC338 DC Current Gain Collector-Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC 10mA, IB 0 Min. 45 25 IC 0.1mA, VBE 0 50 30 IE 0.1mA, IC 0 VCE 45V, IB 0 VCE 25V, IB 0 VCE 1V, IC 100mA VCE 1V, IC 300mA IC 500mA, IB 50mA VCE 1V, IC 300mA VCE 5V, IC 10mA, f 50MHz VCB 10V, IE 0, f 1MHz 100 12 100 60 5 2 2 100 100 630 0.7 1.2 V V MHz pF V V V nA nA Typ. Max. Units V V

BVCES

BVEBO ICES

hFE1 hFE2 VCE (sat) VBE (on) fT Cob

hFE Classification
Classification hFE1 hFE2 16 100 250 6025 160 400 10040 250 630 170-

2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002