BC517 NPN Darlington Transistor

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BC517 NPN Darlington Transistor

January 2005

BC517
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05.

1

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Ta 25 C unless otherwise noted

Parameter

Value
30 40 10

Units
V V V A C

- Continuous

1.2 -55 150

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics
Symbol
Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(on)

Ta 25 C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current

Conditions
IC 2.0mA, IB 0 IC 10 A, IE 0 IE 100nA, IC 0 VCB 30V, IE 0 VCE 2.0V, IC 20mA IC 100mA, IB 0.1mA IC 10mA, VCE 5.0V

Min.
30 40 10

Max

Units
V V V

100

nA

On Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage 30,000 1 1.4 V V

Thermal Characteristics T
Symbol
PD RJC RJA Total Device Dissipation Derate above 25 C

a

25 C unless otherwise noted

Parameter

Value
625 5.0 83.3 200

Units
mW mW/ C C/W C/W

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

BC517 Rev. A

BC517 Datasheet Fairchild Download PDF

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BC517 DATASHEET