BC549

BC546/547/548/549/550

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BC546/547/548/549/550

BC546/547/548/549/550
Switching and Applications
High Voltage: BC546, VCEO 65V Low Noise: BC549, BC550 Complement to BC556 ... BC560

TO-92

1. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/550 : BC548/549 Value 80 50 30 65 45 30 6 5 100 500 150 -65 150 Units V V V V V V V V mA mW C C

VCEO

Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/550

VEBO IC PC TJ TSTG

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF Parameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB 30V, IE 0 VCE 5V, IC 2mA IC 10mA, IB 0.5mA IC 100mA, IB 5mA IC 10mA, IB 0.5mA IC 100mA, IB 5mA VCE 5V, IC 2mA VCE 5V, IC 10mA VCE 5V, IC 10mA, f 100MHz VCB 10V, IE 0, f 1MHz VEB 0.5V, IC 0, f 1MHz VCE 5V, IC 200 A f 1KHz, RG 2K VCE 5V, IC 200 A RG 2K, f 30 15000MHz 580 Min. 110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 10 4 4 3 6 700 720 Typ. Max. 15 800 250 600 mV mV mV mV mV mV MHz pF pF dB dB dB dB Units nA

hFE Classification
Classification hFE
2002 Fairchild Semiconductor Corporation

A 110 220

B 200 450

C 420 800

Rev. A2, August 2002