BC558

BC556/557/558/559/560

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BC556/557/558/559/560

BC556/557/558/559/560
Switching and Amplifier
High Voltage: BC556, VCEO -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550

TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -50 -30 -65 -45 -30 -5 -100 500 150 -65 150 Units V V V V V V V mA mW C C

VCEO

VEBO IC PC TJ TSTG

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NF Parameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 Test Condition VCB -30V, IE 0 VCE -5V, IC 2mA IC -10mA, IB -0.5mA IC -100mA, IB -5mA IC -10mA, IB -0.5mA IC -100mA, IB -5mA VCE -5V, IC -2mA VCE -5V, IC -10mA VCE -5V, IC -10mA, f 10MHz VCB -10V, IE 0, f 1MHz VCE -5V, IC -200 A f 1KHz, RG 2K VCE -5V, IC -200 A RG 2K, f 30 15000MHz 2 1 1.2 1.2 -600 Min. 110 -90 -250 -700 -900 -660 150 6 10 4 4 2 -750 -800 Typ. Max. -15 800 -300 -650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA

hFE Classification
Classification hFE A 110 220 B 200 450 C 420 800

2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002