BC635

BC635/637/639

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BC635/637/639

BC635/637/639
Switching and Amplifier Applications
Complement to BC636/638/640

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCER Parameter Collector-Emitter Voltage at RBE 1K : BC635 : BC637 : BC639 Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current Peak Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature 45 60 80 5 1 1.5 100 1 150 -65 150 V V V V A A mA W C C 45 60 100 V V V Value 45 60 100 Units V V V

VCES

PW 5ms, Duty Cycle 10%

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : All : BC635 : BC637/BC639 : All Test Condition IC 10mA, IB 0 Min. 45 60 80 VCB 30V, IE 0 VEB 5V, IC 0 VCE 2V, IC 5mA VCE 2V, IC 150mA VCE 2V, IC 500mA IC 500mA, IB 50mA VCE 2V, IC 500mA VCE 5V, IC 10mA, f 50MHz 100 25 40 40 25 0.1 0.1 250 160 0.5 1 V V MHz Typ. Max. Units V V V A A

ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT

Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation

Rev. B2, December 2002