BC638

BC638 PNP Epitaxial Silicon Transistor

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BC638 PNP Epitaxial Silicon Transistor

BC638
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
Complement to BC637

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings T
Symbol
VCER VCES VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current

25 C unless otherwise noted

Parameter
Collector-Emitter Voltage at RBE 1K

Value
-60 -60 -60 -5 -1 -1.5 -100 1 150 -65 150

Units
V V V V A A mA W C C

Collector Power Dissipation Junction Temperature Storage Temperature
Ta 25 C unless otherwise noted

Electrical Characteristics
Symbol
BVCEO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (on) fT

Parameter
Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Test Condition
IC -10mA, IB 0 VCB -30V, IE 0 VEB -5V, IC 0 VCE -2V, IC -5mA VCE -2V, IC -150mA VCE -2V, IC -500mA IC -500mA, IB -50mA VCE -2V, IC -500mA VCE -5V, IC -10mA, f 50MHz

Min.
-60

Typ.

Max.
-0.1 -0.1

Units
V A A

25 40 25

160 -0.5 -1 100 V V MHz

Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BC638 Rev. C2