BC63916

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BC63916

BC63916
Switching and Amplifier Applications

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCER VCES VCEO VEBO IC PC TJ, TSTG Parameter Collector-Emitter Voltage at RBE 1K Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating and Storage Junction Temperature Range Value 100 100 80 5 1 1 -55 150 Units V V V V A W C

PW 5ms, Duty Cycle 10%

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 100 A, IE 0 IC 10mA, IB 0 IE 10 A, IC 0 VCB 30V, IE 0 VEB 5V, IC 0 VCE 2V, IC 5mA VCE 2V, IC 150mA VCE 2V, IC 500mA IC 500mA, IB 50mA VCE 2V, IC 500mA VCE 5V, IC 10mA, f 50MHz 100 25 100 25 Min. 100 80 5.0 100 10 250 0.5 1 V V MHz Typ. Max. Units V V V nA A

Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product

2003 Fairchild Semiconductor Corporation

Rev. A, January 2003