BC807

BC807/BC808

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BC807/BC808

BC807/BC808
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages Complement to BC817/BC818
3

2 1

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : BC807 : BC808 VCEO Collector-Emitter Voltage : BC807 : BC808 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature -45 -25 -5 -800 -310 150 -65 150 V V V mA mW C C -50 -30 V V Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC807 : BC808 Collector-Emitter Breakdown Voltage : BC807 : BC808 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC -10mA, IB 0 Min. -45 -25 IC -0.1mA, VBE 0 -50 -30 IE -0.1mA, IC 0 VCE -25V, VBE 0 VEB -4V, IC 0 VCE -1V, IC -100mA VCE -1V, IC -300mA IC -500mA, IB -50mA VCE -1V, IC -300mA VCE -5V, IC -10mA f 50MHz VCB -10V, f 1MHz 100 12 100 60 -5 -100 -100 630 -0.7 -1.2 V V MHz pF V V V nA nA Typ. Max. Units V V

BVCES

BVEBO ICES IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob

2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002