BC817

BC817/BC818 NPN Epitaxial Silicon Transistor

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BC817/BC818 NPN Epitaxial Silicon Transistor

November 2006

BC817/BC818
NPN Epitaxial Silicon Transistor Features
Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC807/ BC808
3

2 1

SOT-23

Absolute Maximum Ratings
Symbol
VCBO

Ta 25 C unless otherwise noted

1. Base 2. Emitter 3. Collector

Parameter
Collector-Base Voltage : BC817 : BC818

Value
50 30 45 25 5 800 310 150 -65 150

Units
V V V V V mA mW C C

VCEO

Collector-Emitter Voltage : BC817 : BC818

VEBO IC PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
BVCEO

Parameter
Collector-Emitter Breakdown Voltage : BC817 : BC818 Collector-Emitter Breakdown Voltage : BC817 : BC818 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Test Condition
IC 10mA, IB 0

Min.
45 25

Typ.

Max.

Units
V V V V V

BVCES

IC 0.1mA, VBE 0 50 30 IE 0.1mA, IC 0 VCE 25V, VBE 0 VEB 4V, IC 0 VCE 1V, IC 100mA VCE 1V, IC 300mA IC 500mA, IB 50mA VCE 1V, IC 300mA VCE 5V, IC 10mA f 50MHz VCB 10V, f 1MHz 100 12 100 60 5 100 100 630 0.7 1.2 V V MHz pF

BVEBO ICES IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob

nA nA

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BC817/BC818 Rev. B