BC849

BC846- BC850 NPN Epitaxial Silicon Transistor

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

BC846- BC850 NPN Epitaxial Silicon Transistor

August 2006

BC846- BC850
NPN Epitaxial Silicon Transistor Features
Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 Complement to BC856 ... BC860
2 1 3

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCBO Collector-Base Voltage

Ta 25 C unless otherwise noted

Parameter
: BC846 : BC847/850 : BC848/849

Value
80 50 30 65 45 30 6 5 100 310 150 -65 150

Units
V V V V V V V V mA mW C C

VCEO

Collector-Emitter Voltage : BC846 : BC847/850 : BC848/849 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC846/847 : BC848/849/850

VEBO IC PC TJ TSTG

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF

Parameter
Collector Cut-off Current DC Current Gain

Test Condition
VCB 30V, IE 0 VCE 5V, IC 2mA

Min.
110

Typ.

Max.
15 800

Units
nA

Collector-Emitter Saturation Voltage IC 10mA, IB 0.5mA IC 100mA, IB 5mA Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC846/847/848 : BC849/850 : BC849 : BC850 IC 10mA, IB 0.5mA IC 100mA, IB 5mA VCE 5V, IC 2mA VCE 5V, IC 10mA VCE 5V, IC 10mA, f 100MHz VCB 10V, IE 0, f 1MHz VEB 0.5V, IC 0, f 1MHz VCE 5V, IC 200 A RG 2K, f 1KHz VCE 5V, IC 200 A RG 2K, f 30 15000Hz 580

90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4

250 600

mV mV mV mV

700 720

mV mV MHz

pF pF

10 4 4 3

dB dB dB dB

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BC846- BC850 Rev. B